Tokiyoshi Matsuda
Ryukoku University, Japan
Biography
Tokiyoshi Matsuda has his expertise in fabricating amorphous oxide semiconductor materials, evaluation of defects in the oxide semiconductor, and its TFT application. He proposed the model of oxygen vacancy in IGZO. Novel material of Ga-Sn-O was fabricated to avoid the use of rare metal material of In, and Zn which may cause the device instability. These oxide semiconductors are suitable for use in novel devices not only next-generation displays, but also power devices and artificial intelligence devices such as neural networks.
Abstract
Abstract : Rare-metal-free high-performance Ga-Sn-O thin film transistor
